Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

作者：Fangzhou Wang, Chang Gao, Guojian Ding, Cheng Yu, Zhuocheng Wang, Xiaohui Wang, Xiaohui Wang, Qi Feng, Ping Yu, Peng Zuo, Wanjun Chen, Yang Wang, Haiqiang Jia, Hong Chen, Bo Zhang, Zeheng Wang, Zeheng Wang · 发表于：Science China Information Sciences · 年份：2024 · DOI：10.1007/s11432-024-4197-y · 被引用次数：3 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Nanowire Synthesis and Applications

Abstract In this paper, we design and fabricate a Schottky-metal-insulator-semiconductor (MIS) cascode anode GaN lateral field-effect diode (CA-LFED) to achieve ultralow reverse leakage current ( I LEAK ). The device based on AlGaN/GaN high-electron-mobility-transistor (HEMT) includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky contact. At reverse bias, the high electric-field is effectively prevented by the normally-off MIS-controlled channel edge. Together with the high barrier height Schottky contact, this feature significantly suppresses the I LEAK . Supported by the device fabrication, the CA-LFED with high breakdown voltage (BV) > 600 V shows an ultralow I LEAK of 3.6 × 10 −9 A/mm as well as a low forward voltage drop ( V F ) of 2.2 V. The performance suggests that the CA-LFED can be a promising candidate for ultralow I LEAK and better V F - I LEAK trade-off GaN power diode applications.