Band and defect engineering in solution-processed nanocrystal building blocks to promote transport properties in nanomaterials: The case of thermoelectric Cu 3 SbSe 4

作者：Shanshan Xiao, Mingjun Zhao, Mingquan Li, Shanhong Wan, Aziz Genç, Lulu Huang, Lei Chen, Yu Zhang, María Ibáñez, Khak Ho Lim, Min Hong, Yü Liu, Andreu Cabot · 发表于：Nano Research · 年份：2024 · DOI：10.26599/nr.2025.94907072 · 被引用次数：10 · 研究领域：Chalcogenide Semiconductor Thin Films、Advanced Thermoelectric Materials and Devices、Quantum Dots Synthesis And Properties

The development of cost-effective and high-performance thermoelectric (TE) materials faces significant challenges, particularly in improving the properties of promising copper-based TE materials such as Cu 3 SbSe 4 , which are limited by their poor electrical conductivity. This study presents a detailed comparative analysis of three strategies to promote the electrical transport properties of Cu 3 SbSe 4 through Sn doping: conventional Sn atomic doping, surface treatment with SnSe molecular complexes, and blending with SnSe nanocrystals to form nanocomposites, all followed by annealing and hot pressing under identical conditions. Our results reveal that a surface treatment using SnSe molecular complexes significantly enhances TE performance over atomic doping and nanocomposite formation, achieving a power factor of 1.1 mW·m −1 ·K −2 and a maximum dimensionless figure of merit zT value of 0.80 at 640 K, representing an excellent performance among Cu 3 SbSe 4 -based materials produced via solution-processing methods. This work highlights the effectiveness of surface engineering in optimizing the transport properties of nanostructured materials, demonstrating the versatility and cost-efficiency of solution-based technologies in the development of advanced nanostructured materials for application in the field of TE among others.