Uniformity, Linearity, and Symmetry Enhancement in TiO x /MoS 2– x O x Based Analog RRAM via S-Vacancy Confined Nanofilament

作者：Dongdong Sun, Xudong Zhu, Shaochuan Chen, Haotian Fang, Guixu Zhu, Gongpeng Lan, Lixin He, Yuanyuan Shi · 发表于：Nano Letters · 年份：2024 · DOI：10.1021/acs.nanolett.4c04434 · 被引用次数：22 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Conducting polymers and applications

Due to the stochastic formation of conductive filaments (CFs), analog resistive random-access memory (RRAM) struggles to simultaneously achieve low variability, high linearity, and symmetry in conductance tuning, thus complicating on-chip training and limiting versatility of RRAM based computing-in-memory (CIM) chips. In this study, we present a simple and effective approach using monolayer (ML) MoS 2 as interlayer to control the CFs formation in TiO x switching layer. The limited S-vacancies (S v ) in MoS 2– x O x interlayer can further confine the position, size, and quantity of CFs, resulting in a highly uniform and symmetrical switching behavior. The set and reset voltages ( V set and V reset ) in TiO x /MoS 2– x O x based RRAM are symmetric, with cycle-to-cycle variations of 1.28% and 1.7%, respectively. Moreover, high conductance tuning linearity and 64-level switching capabilities are achieved, which facilitate high accuracy (93.02%) on-chip training. This method mitigates the device nonidealities of analog RRAM through S v confined CFs, accelerating the development of RRAM based CIM chips.