A self‐adapting energy‐band docking of CuGaS 2 @BiVO 4 S‐scheme structure for efficient photoelectrochemical hydrogen production

作者：Jiang Li, Yu‐Chen Fang, Xiao Wang, Lingtong Ding, Zhijun Wang, Xinyao Yang, J. Lančok, Weimin Li, Gaokuo Zhong, Xin Wang, Zheng Xing, Shen Zhao, Shude Liu, Xia Long, Ming Ma · 发表于：Rare Metals · 年份：2024 · DOI：10.1007/s12598-024-03072-2 · 被引用次数：10 · 研究领域：Advanced Photocatalysis Techniques、Copper-based nanomaterials and applications、ZnO doping and properties

Abstract Typical p‐n junctions have emerged as a promising strategy for contending with charge carrier recombination in solar conversion. However, the photo‐corrosion and unsuitable energy band positions still hinder their practical application for hydrogen production from water in photoelectrochemical systems. Here, an in‐situ photo‐oxidation method is proposed for achieving self‐adapting activation of BiVO 4 ‐based photoanodes with surface‐encapsulated CuGaS 2 particles by the ZnO layer. The self‐adapting activation demotes the energy band positions of CuGaS 2 , establishing an S‐scheme structure with BiVO 4 , resulting in an efficient p‐n junction photoanode. The optimal sample exhibits enhanced photocurrent and an onset potential cathodically shifted by ~ 300 mV compared with BiVO 4 , which is attributed to significantly enhanced charge transport and transfer efficiencies. As expected, it attains the highest photocurrent value of 5.87 mA·cm −2 , aided by a hole scavenger at 1.23 V versus a reversible hydrogen electrode, which significantly surpasses that of BiVO 4 (4.32 mA·cm −2 ).