Dual relaxation behaviors driven by a homogeneous and stable dual-interface charge layer based on an EGaIn absorber

作者：Geng Chen, Tao Zhang, Limin Zhang, Kai Tao, Qiang Chen, Hongjing Wu · 发表于：Materials Horizons · 年份：2024 · DOI：10.1039/d4mh01564a · 被引用次数：21 · 研究领域：Semiconductor Quantum Structures and Devices、Quantum and electron transport phenomena、Advanced Memory and Neural Computing

interface, likely due to the substantial work function difference between Ni and NiO, coupled with the low barrier height between EGaIn and Ni, which facilitates electron migration. Consequently, the optimized samples exhibited a maximum absorption bandwidth of 7.92 GHz, which is the highest among the EGaIn-based absorbers reported in the literature. This work not only elucidates the mechanism by which multi-heterogeneous interfacial distributions regulate the dielectric properties but also provides an effective approach for modulating the electromagnetic wave performance of liquid metals.