Ambipolar conduction in gated tungsten disulphide nanotube

作者：Aniello Pelella, Luca Camilli, Filippo Giubileo, Alla Zak, M. Passacantando, Yao Guo, Kimberly Intonti, Arun Kumar, Antonio Di Bartolomeo · 发表于：Nanoscale · 年份：2024 · DOI：10.1039/d4nr04877f · 被引用次数：14 · 研究领域：2D Materials and Applications、Machine Learning in Materials Science、MXene and MAX Phase Materials

High drain voltage bias enables ambipolar conduction in tungsten disulphide (WS 2 ) nanotube field-effect (photo-)transistors.