Layer-dependent Schottky contact at TaX 2 –BY (X = S, Se, Te; Y = P, As, Sb) van der Waals interfaces

作者：Israr Ul Haq, A. Mustaqeem, Basit Ali, Muhammad Umair Ashraf, Umair Khan, M. Idrees, M. Shafiq, Yousef Mohammed Alanazi, B. Amin · 发表于：Nanoscale Advances · 年份：2024 · DOI：10.1039/d4na00688g · 被引用次数：5 · 研究领域：2D Materials and Applications、Semiconductor materials and interfaces、Chalcogenide Semiconductor Thin Films

The mechanical, thermal and dynamical stabilities, electronic structure, contact type, and height of the barrier at the interface of TaX 2 (X = S, Se, Te) and BY (Y = P, As, Sb) metal–semiconductor (MS) contact are investigated .