External field-engineered tunable chern number and valley-polarized quantum anomalous hall effect in Ti 3 S 3 Te 2 monolayer

作者：Xiaokang Xu, Jinlian Lu, Huijie Lian, Yinghui Han, Yongjun Liu, Xueke Yu, Ai‐Lei He, Xiaojing Yao, Xiuyun Zhang · 发表于：Journal of Materials Chemistry C · 年份：2024 · DOI：10.1039/d4tc04282d · 被引用次数：7 · 研究领域：Topological Materials and Phenomena、2D Materials and Applications、Graphene research and applications

Quantum anomalous Hall (QAH) insulators with tunable Chern numbers have excellent application prospects in spintronics.