Two-dimensional van der Waals ferroelectrics: A pathway to next-generation devices in memory and neuromorphic computing

作者：Hongyuan Zhao, Jiangni Yun, Zhen Li, Yü Liu, Lei Zheng, Peng Kang · 发表于：Materials Science and Engineering R Reports · 年份：2024 · DOI：10.1016/j.mser.2024.100873 · 被引用次数：19 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices