Achieving High Thermoelectric Performance in Bi 2 (Te, Se) 3 Thin Film with (00 l )-Oriented by Incorporating Tellurization and Selenization Processes

作者：Zhuanghao Zheng, Ning Chen, Zilong Zhang, Junze Zhang, Dong Yang, Mohammad Nisar, Mazhar Hussain Danish, Fu Li, Shuo Chen, Jing-Ting Luo, Guangxing Liang, Yuexing Chen · 发表于：ACS Applied Materials & Interfaces · 年份：2024 · DOI：10.1021/acsami.4c13700 · 被引用次数：8 · 研究领域：Advanced Thermoelectric Materials and Devices、Thermal properties of materials、Thermal Radiation and Cooling Technologies

Flexible thermoelectric (TE) generators have received great attention as a sustainable and reliable option to convert heat from the human body and other ambient sources into electricity. This study provides a synthesis route that involves thermally induced diffusion to introduce Te and Se into Bi, fabricating an n-type Bi–Te–Se flexible thin film on a flexible substrate. This specific synthesis alters the crystal orientation (00 l ) of the thin film, improving in-plane electrical transportation and optimizing carrier concentration. Consequently, Bi x Te y Se 0.42 enhanced both the Seebeck coefficient and electrical conductivity, achieving a power factor of 17.1 μW cm –1 K –2 at room temperature. The TE device assembled with p-type Sb 2 Te 3 exhibited exceptional flexibility with only a 26.2% change in resistance after 1000 times of bending at a radius of about 6 mm. The resistance change was further reduced to 7.5% after the application of a vinyl laurate coating. The fabricated TE device generated an ultrahigh output power of 792 nW with a temperature difference of 30 K.