Room Temperature Chemiresistive Sensing of Sulfur Mustard Simulant by 2D Conjugated MOF Surface Modification

作者：Zhixuan Zhang, Haizhen Li, Huiwen Xue, Xiaoya Gao, Yao Wang, Jun Shen, Xu-Bing Li, Yongchao Zheng, Huaping Wang · 发表于：ACS Materials Letters · 年份：2024 · DOI：10.1021/acsmaterialslett.4c01721 · 被引用次数：21 · 研究领域：Gas Sensing Nanomaterials and Sensors、Analytical Chemistry and Sensors、Advanced Chemical Sensor Technologies

Sulfur mustard (HD) is a powerful vesicant that inflicts fatal damage to humans. However, limited by the temperature-induced detection mechanism, chemiresistive gas sensing of HD or its simulants with high sensitivity and superior selectivity at room temperature remains a huge challenge. Herein, we propose a surface modification strategy for orthorhombic WO 3 ·H 2 O using the epitaxial growth of a 2D conjugated MOF (2D c -MOF) based on the hard–soft acid–base theory. The interfacial electron delocalization from WO 3 ·H 2 O to a 2D c -MOF strengthens the coordination interaction between tungsten (W) and sulfur (S) at room temperature, thus boosting the overall electron delocalization from the mustard gas simulant (2-CEES) to the sensing materials. As a result, the fabricated devices realize room temperature detection of 2-CEES with an impressive detection limit (100 ppb), excellent anti-interference ability, fast response, and good stability. Strategies modifying metal oxide surfaces with 2D c -MOFs provide new ideas for improving room temperature sensing performance.