Accuracy Preserving Extensions to a PDK MOSFET Model for ESD Simulation

作者：Yujie Zhou, Elyse Rosenbaum · 年份：2024 · DOI：10.23919/eos/esd61719.2024.10702120 · 被引用次数：3 · 研究领域：Electrostatic Discharge in Electronics、Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices

This work demonstrates a Verilog-A model that may be interconnected to a PDK MOSFET model; the composite model is valid at ESD current levels while retaining the accuracy of the PDK model for ac, dc, and transient simulation at current levels reflective of normal operating conditions. The model’s accuracy under ESD conditions is verified by comparing simulation results to TLP and VF-TLP measurement data.