Low-symmetry layered semiconductor In2Te5 for promising polarization-sensitive photodetector

作者：Jiaxin Cheng, Guohao Yuan, Weike Wang, Pufan Deng, Hanyang Zhang, Yanling Yin, Weichang Zhou, Yuehua Peng, Ziran Liu, Dongsheng Tang · 发表于：Applied Physics Letters · 年份：2024 · DOI：10.1063/5.0230193 · 被引用次数：9 · 研究领域：2D Materials and Applications、Chalcogenide Semiconductor Thin Films、Advanced Semiconductor Detectors and Materials

Low-symmetry two-dimensional (2D) materials have attracted significant attention for polarization-sensitive photodetection due to the optoelectronic anisotropy. Here, we demonstrated the strong in-plane anisotropy of In2Te5 through electron density distribution calculations based on density functional theory and developed a polarization-sensitive photodetector. The photodetector shows a responsivity of 171.16 mA/W and a response time of 0.42 s under visible light illumination. Additionally, it presents a polarization-sensitive photoresponse with a dichroic ratio of 1.34. Our work reveals the anisotropic optoelectronic properties of In2Te5, potentially stimulating research interest in Group III-VI 2D materials (Pentatelluride M2Te5, M = Al, Ga, In, etc.).