Additive engineering for Sb2S3 indoor photovoltaics with efficiency exceeding 17%

作者：Xiao Chen, Xiaoxuan Shu, Jiacheng Zhou, Lei Wan, Peng Xiao, Yuchen Fu, Junzhi Ye, Yi‐Teng Huang, Yan Bin, Ding‐Jiang Xue, Tao Chen, Jie‐Jie Chen, Robert L. Z. Hoye, Ru Zhou · 发表于：Light Science & Applications · 年份：2024 · DOI：10.1038/s41377-024-01620-0 · 被引用次数：80 · 研究领域：Chalcogenide Semiconductor Thin Films、Perovskite Materials and Applications、Quantum Dots Synthesis And Properties

Abstract Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb 2 S 3 is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb 2 S 3 solar cells is limited by nonradiative recombination, which is dependent on the quality of the absorber films. Additive engineering is an effective strategy to fine tune the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb 2 S 3 films to be controlled, enabling the deposition of high-quality Sb 2 S 3 absorbers with reduced grain boundary density, optimized band positions, and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb 2 S 3 films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb 2 S 3 absorber films, the MEA-modulated Sb 2 S 3 solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5 G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb 2 S 3 IPVs. Furthermore...