Ultrathin Ga 2 O 3 Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal Oxidation

作者：Weiheng Zhong, Yuqing Liu, Hong Huang, Zhaojie Sun, Wei Xin, Weizhen Liu, Xiaolong Zhao, Shibing Long, Haiyang Xu · 发表于：Nano Letters · 年份：2024 · DOI：10.1021/acs.nanolett.4c04030 · 被引用次数：30 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Advanced Photocatalysis Techniques

Low-dimensional Ga 2 O 3 demonstrates a unique ultraviolet photoresponse and could be used in various electronic and optical systems. However, the low-dimensional Ga 2 O 3 photodetector is faced with the challenges of a complex preparation process and poor device performance. In this work, ultrathin Ga 2 O 3 layers with ∼7 nm thickness are prepared on quartz rods by UV exposure to liquid gallium. Benefiting from low-density oxygen vacancy defects cured by UV exposure, the low-dimensional Ga 2 O 3 photodetector exhibits a high response speed (rise: 64.7 μs; fall: 51.4 μs) and an exceptional linear dynamic range of 120 dB. Furthermore, the photodetector array based on these ultrathin Ga 2 O 3 shows an effective trajectory tracking capability by monitoring UV source motion. This work develops a simple preparation method to construct a low-dimensional UV photodetector array with fast response and useful trajectory tracking capability, exhibiting the significance of ultrathin Ga 2 O 3 in UV optoelectronics.