Te x Se 1– x Shortwave Infrared Photodiode Arrays with Monolithic Integration

作者：Meng Peng, Yuming He, Yuxuan Hu, Zunyu Liu, Xinyi Chen, Zhiqiang Liu, Junrui Yang, Maohua Chen, Weijie Liu, Feng Wu, Luying Li, Jiangnan Dai, Changqing Chen, Changqing Chen, Jungang He, Long Hu, Chao Chen, Chao Chen, Jiang Tang · 发表于：Nano Letters · 年份：2024 · DOI：10.1021/acs.nanolett.4c03728 · 被引用次数：22 · 研究领域：Chalcogenide Semiconductor Thin Films、Advanced Semiconductor Detectors and Materials、Phase-change materials and chalcogenides

Te x Se 1– x shortwave infrared (SWIR) photodetectors show promise for monolithic integration with readout integrated circuits (ROIC), making it a potential alternative to conventional expensive SWIR photodetectors. However, challenges such as a high dark current density and insufficient detection performance hinder their application in large-scale monolithic integration. Herein, we develop a ZnO/Te x Se 1– x heterojunction photodiode and synergistically address the interfacial elemental diffusion and dangling bonds via inserting a well-selected 0.3 nm amorphous TeO 2 interfacial layer. The optimized device achieves a reduced dark current density of −3.5 × 10 –5 A cm –2 at −10 mV, a broad response from 300 to 1700 nm, a room-temperature detectivity exceeding 2.03 × 10 11 Jones, and a 3 dB bandwidth of 173 kHz. Furthermore, for the first time, we monolithically integrate the Te x Se 1– x photodiodes on ROIC (64 × 64 pixels) with the largest-scale array among all Te x Se 1– x -based detectors. Finally, we demonstrate its applications in transmission imaging and substance identification.