Heterogeneous Nucleation Regulation Amends Unfavorable Crystallization Orientation and Defect Features of Antimony Selenosulfide Film for High‐Efficient Planar Solar Cells

作者：Donglou Ren, Chen Li, Jun Xiong, Weizheng Liang, M. Cathelinaud, Xianghua Zhang, Shuo Chen, Zhiqiang Li, Daocheng Pan, Guangxing Liang, Bingsuo Zou · 发表于：Angewandte Chemie International Edition · 年份：2024 · DOI：10.1002/anie.202413108 · 被引用次数：29 · 研究领域：Chalcogenide Semiconductor Thin Films、Quantum Dots Synthesis And Properties、Advanced Semiconductor Detectors and Materials

Abstract Antimony selenosulfide (Sb 2 (S,Se) 3 ) has obtained widespread concern for photovoltaic applications as a light absorber due to superior photoelectric features. Accordingly, various deposition technologies have been developed in recent years, especially hydrothermal deposition method, which has achieved a great success. However, device performances are limited with severe carrier recombination, relating to the quality of absorber and interfaces. Herein, bulk and interface defects are simultaneously suppressed by regulating heterogeneous nucleation kinetics with barium dibromide (BaBr 2 ) introduction. In details, the Br adsorbs and dopes on the polar planes of cadmium sulfide (CdS) buffer layer, promoting the exposure of nonpolar planes of CdS, which facilitates the favorable growth of [hk1]‐Sb 2 (S,Se) 3 films possessing superior crystallinity and small interface defects. Additionally, the Se/S ratio is increased due to the replacement of Se by Br, causing a downshift of the Fermi levels with a benign band alignment and a shallow‐level defect. Moreover, Ba 2+ is located at grain boundaries by coordination with S and Se ions, passivating grain boundary defects. Consequently, the efficiency is increased from 7.70 % to 10.12 %. This work opens an avenue towards regulating the heterogeneous nucleation kinetics of Sb 2 (S,Se) 3 film deposited via hydrothermal deposition approach to optimize its crystalline orientation and defect features.