Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe 2 Heterostructure

作者：Zhiyuan Dai, Yu Yu, Haibiao Guan, Ruowen Wang, Ye Tao, Yonghao Bu, Jie Deng, Mengdie Shi, Rui Xin, Tianxin Li, Haibo Shu, Xiaoshuang Chen, Jing Zhou · 发表于：Advanced Electronic Materials · 年份：2024 · DOI：10.1002/aelm.202400268 · 被引用次数：7 · 研究领域：2D Materials and Applications、Perovskite Materials and Applications、Transition Metal Oxide Nanomaterials

Abstract Room‐temperature blackbody‐sensitive infrared photodetectors with ultra‐broadband and ultrafast photoresponses are highly desired in numerous scientific and technical fields. However, it is challenging for an infrared photodetector to simultaneously possess all the aforementioned characteristics. In this study, a room‐temperature Te/PtSe 2 heterostructure photodetector is established to address this challenge, utilizing the built‐in field of the heterostructure, the crossing conduction and valence bands of PtSe 2 , the high mobilities of both materials, and a considerable photogain. The device is photoresponsive over the ultrabroad wavelength range (519 nm–10 µm). The peak responsivity and specific detectivity reach 196.8 A W −1 , and 4.3 × 10 9 cm Hz 1/2 W −1 , respectively, at the wavelength of 3.32 µm. The device also exhibits blackbody sensitivity, with a responsivity of 24.8 A W −1 , and a specific detectivity of 7.4 × 10 8 cm Hz 1/2 W −1 . The photoresponse is ultrafast, corresponding to a 3 dB bandwidth of 160 kHz. The study provides new possibilities for high‐performance room‐temperature infrared detection.