Pressure-induced photo responsiveness enhancement and positive–negative switch in ZrSe2

作者：Na Wang, Hicham Moutaabbid, Zhenbao Feng, Guangyu Wang, Haiwa Zhang, Guozhao Zhang, Zi-Yu Cao, Yinwei Li, Cailong Liu · 发表于：Applied Physics Letters · 年份：2024 · DOI：10.1063/5.0223258 · 被引用次数：7 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Perovskite Materials and Applications

ZrSe2, a member of the group-IVB transition metal dichalcogenides, shows favorable performance in optoelectronic applications. Here, the photoelectric properties of ZrSe2 under high pressure have been systematically investigated. At 13.5 GPa, the photocurrent of ZrSe2 increases three orders of magnitude greater than its initial value. Interestingly, above 23.5 GPa, ZrSe2 exhibits a negative photocurrent response, which can be attributed to the photothermal effect caused by pressure-induced metallization. This study demonstrates the critical role of pressure in regulating the optoelectronic properties of layered materials and the potential application of layered ZrSe2 in pressure-responsive optoelectronic devices.