Comparison and analysis on static and dynamic performance of 1.2-kV SiC planar MOSFETs with different cell topologies

作者：Huan Wu, Houcai Luo, Jingping Zhang, Bofeng Zheng, Ruonan Wang, Xianping Chen · 发表于：Materials Science in Semiconductor Processing · 年份：2024 · DOI：10.1016/j.mssp.2024.108849 · 被引用次数：4 · 研究领域：Silicon Carbide Semiconductor Technologies、Electromagnetic Compatibility and Noise Suppression、Multilevel Inverters and Converters