On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

作者：Wen-Chia Wu, Terry Y.T. Hung, D. Mahaveer Sathaiya, Edward Chen, Chen-Feng Hsu, Walker Yun, Hsiang-Chi Hu, Bo-Heng Liu, T.Y. Lee, Chi‐Chung Kei, Wen‐Hao Chang, Jin Cai, Wallace Jeff, Chung-Cheng Wu, H.‐S. Philip Wong, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana Radu · 年份：2024 · DOI：10.1109/vlsitechnologyandcir46783.2024.10631401 · 被引用次数：16 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Semiconductor Quantum Structures and Devices

2D transition metal dichalcogenides (TMDs) show promise for transistor scaling, but their on-scale performance had not been proven yet. This work demonstrates contact length (Lc) scaling while holding a low contact resistance (RC) down to 11 nm. Channel length$(\mathrm{L}_{\text{CH}})$scaling shows IONcan increase down to at least 12 nm with low Rc. The very scaled$(\mathrm{L}_{\text{CH }}=19$nm and$\mathrm{L}_{\mathrm{C}}=12$nm) Mos2 transistor with Sb-based metal contact has current density of ~1130 μA/μm at$\mathrm{V}_{\text{DS}}$= 1 V, and a low$\mathrm{R}_{C}$of ~ 190 Ω.μm. These scaled transistors, processed within a back-end-of-line (BEOL) thermal budget, do not exhibit subthreshold swing (S.S.) degradation or observable drain-induced barrier lowering (DIBL) down to$\mathrm{L}_{\text{CH}}=12\text{nm}$.