Nonvolatile Electric Control of Rashba Spin Splitting in Sb/In 2 Se 3 Heterostructure

作者：Haixia Cheng, Xu Sun, Jun Zhou, Shijie Wang, Hang Su, Wei Ji · 发表于：ACS Applied Materials & Interfaces · 年份：2024 · DOI：10.1021/acsami.4c07562 · 被引用次数：8 · 研究领域：Quantum and electron transport phenomena、2D Materials and Applications、Electronic and Structural Properties of Oxides

Ferroelectric Rashba semiconductors (FRS) are highly demanded for their potential capability for nonvolatile electric control of electron spins. An ideal FRS is characterized by a combination of room temperature ferroelectricity and a strong Rashba effect, which has, however, been rarely reported. Herein, we designed a room-temperature FRS by vertically stacking a Sb monolayer on a room-temperature ferroelectric In 2 Se 3 monolayer. Our first-principles calculations reveal that the Sb/In 2 Se 3 heterostructure exhibits a clean Rashba splitting band near the Fermi level and a strong Rashba effect coupled to the ferroelectric order. Switching the electric polarization direction enhances the Rashba effect, and the flipping is feasible with a low energy barrier of 22 meV. This Rashba–ferroelectricity coupling effect is robust against changes of the heterostructure interfacial distance and external electric fields. Such a nonvolatile electrically tunable Rashba effect at room temperature enables potential applications in next-generation data storage and logic devices operated under small electrical currents.