Epitaxial growth conditions and interface quality of InGaAs/GaAsP multiple quantum wells

作者：Jingfei Mu, Bin Wang, Yinli Zhou, Yinli Zhou, Chao Chen, Yugang Zeng, Jianwei Zhang, Xing Zhang, Tianjiao Liu, Zhuo Zhang, Yingli Zhou, Yingli Zhou, Yuehui Xu, Gaohui Yuan, Jiye Zhang, Yongqiang Ning, Lijun Wang · 发表于：Materials Science in Semiconductor Processing · 年份：2024 · DOI：10.1016/j.mssp.2024.108782 · 被引用次数：6 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices、Quantum Dots Synthesis And Properties