Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed

作者：Lingxiao Ma, Shuo Lin, Hui Ma, Jie Liao, Yuting Ye, Jialing Jian, Junying Li, Pengjun Wang, Shixun Dai, Ting He, Jiacheng Wang, Tao Jin, Jianghong Wu, Yalan Si, Jun Li, Jianyi Yang, Lan Li, Hongtao Lin, Weiwei Chen · 发表于：ACS Nano · 年份：2024 · DOI：10.1021/acsnano.4c04640 · 被引用次数：11 · 研究领域：Advanced Semiconductor Detectors and Materials、Photonic and Optical Devices、Semiconductor Quantum Structures and Devices

The detection of mid-infrared light, covering a variety of molecular vibrational spectra, is critical for both civil and military purposes. Recent studies have highlighted the potential of two-dimensional topological semimetals for mid-infrared detection due to their advantages, including van der Waals (vdW) stacking and gapless electronic structures. Among them, mid-infrared photodetectors based on type-II Dirac semimetals have been less studied. In this paper, we present a silicon waveguide integrated type-II Dirac semimetal platinum telluride (PtTe 2 ) mid-infrared photodetector, and further improve detection performance by using PtTe 2 -graphene heterostructure. For the fabricated silicon waveguide-integrated PtTe 2 photodetector, with an external bias voltage of −10 mV and an input optical power of 86 nW, the measured responsivity is 2.7 A/W at 2004 nm and a 3 dB bandwidth of 0.6 MHz is realized. For the fabricated silicon waveguide-integrated PtTe 2 -graphene photodetector, as the external bias voltage and input optical power are 0.5 V and 0.13 μW, a responsivity of 5.5 A/W at 2004 nm and a 3 dB bandwidth of 35 MHz are obtained. An external quantum efficiency of 119% can be achieved at an input optical power of 0.376 μW.