Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations

作者：Guanglin Zhang, Bingkun Wang, Huijuan Wu, Jinqiu Zhang, Shanshui Lian, Wenjun Bai, Shan Zhang, Zhiduo Liu, Siwei Yang, Guqiao Ding, Caichao Ye, Li Zheng, Gang Wang · 发表于：Nano Letters · 年份：2024 · DOI：10.1021/acs.nanolett.4c01917 · 被引用次数：18 · 研究领域：Graphene research and applications、Nanowire Synthesis and Applications、2D Materials and Applications

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (10 13 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400–1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.