Robust Ferrimagnetism and Ferroelectricity in 2D ɛ ‐Fe 2 O 3 Semiconductor with Ultrahigh Ordering Temperature

作者：Tao Wang, Wuhong Xue, Huali Yang, Y.F. Zhang, Shaobo Cheng, Zhiwei Fan, Run‐Wei Li, Peng Zhou, Xiaohong Xu · 发表于：Advanced Materials · 年份：2024 · DOI：10.1002/adma.202311041 · 被引用次数：21 · 研究领域：Multiferroics and related materials、Ferroelectric and Piezoelectric Materials、2D Materials and Applications

Abstract 2D single‐phase multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high‐density multilevel data storage. One of the current limitations for application is the scarcity of the materials, especially those combine ferromagnetism and ferroelectricity at high temperatures. Here, robust ferrimagnetism and ferroelectricity in 2D ɛ‐Fe 2 O 3 samples with both single‐crystalline and polycrystalline form are demonstrated. Interestingly, the polycrystalline nanosheets also exhibit easily switchable ferroelectric polarizations comparable to that of single crystals. The existence of grain boundary does not hinder the switching and retention of ferroelectric polarization. Furthermore, the ɛ‐Fe 2 O 3 nanosheets show ferrimagnetic and ferroelectric Curie temperatures up to 800 K, which reaches record highs in 2D single‐phase multiferroic materials. This work provides important progress in the exploration of 2D high‐temperature single‐phase multiferroics for potentially compact high‐temperature information nanodevices.