Field management in NiO x /β-Ga2O3 merged-PIN Schottky diodes: simulation studies and experimental validation

作者：Jose Manuel Taboada Vasquez, Ankita Mukherjee, Smriti Singh, Vishal Khandelwal, Saravanan Yuvaraja, Glen Isaac Maciel García, Manoj K. Rajbhar, Xiaohang Li, Biplab Sarkar · 发表于：Journal of Physics D Applied Physics · 年份：2024 · DOI：10.1088/1361-6463/ad632c · 被引用次数：5 · 研究领域：Ga2O3 and related materials、Advanced Photocatalysis Techniques、ZnO doping and properties

Abstract In recent years, p-type NiO x has emerged as a promising alternative to realize kilovolt-class β -Ga 2 O 3 -based PN junction diodes. However, only a handful of studies could realize β –Ga 2 O 3 -based unipolar diodes using NiO x as a guard ring or floating rings. In this work, we investigate the device design of NiO x / β -Ga 2 O 3 unipolar diodes using the technology computer aided design simulations and experimental validations. We show that a systematic electric field management approach can potentially lead to NiO x / β -Ga 2 O 3 heterojunction unipolar diode and offer enhanced breakdown characteristics without a severe compromise in the ON-state resistance. Accordingly, the NiO x / β -Ga 2 O 3 heterojunction diode in the merged-PIN Schottky configuration is shown to outperform the regular Schottky diode or junction barrier Schottky diode counterpart. The analysis performed in this work is believed to be valuable in the device design of β -Ga 2 O 3 -based unipolar diodes that use a different p-type semiconductor candidate as guard rings and floating rings.