Heat Dissipation Enhancement of High-Power Deep-Ultraviolet LEDs Through Plated Copper on Thick Film Diamond Substrates

作者：Yongjie Ding, Linlin Xu, Qing Wang, Renli Liang, Yang Peng, Xinzhong Wang, Jiangnan Dai, Mingxiang Chen · 发表于：IEEE Electron Device Letters · 年份：2024 · DOI：10.1109/led.2024.3424584 · 被引用次数：9 · 研究领域：GaN-based semiconductor devices and materials、ZnO doping and properties、Thermal Radiation and Cooling Technologies

Heat accumulation seriously affects the photothermal performances of high-power deep-ultraviolet light-emitting diodes (DUV LEDs). In this letter, plated copper on thick film (PCTF) diamond substrates were proposed to enhance the heat dissipation of high-power DUV LEDs. The thermal resistance of PCTF-diamond substrate is only 1.064 K/W, which is 53.6% lower than that of the PCTF-Al2O3 substrate (2.293 K/W). The DUV LEDs packaged by PCTF-diamond substrates achieve excellent optical and thermal performances. Under a high current of 0.7 A, the light output power of DUV LEDs packaged by PCTF-diamond substrate reaches 180.4 mW, which is 20.3% higher than that of DUV LEDs packaged by PCTF-Al2O3 substrates (150 mW). Meanwhile, the PCTF-diamond substrate enables a surface temperature of 158°C for DUV-LEDs, which is 43°C lower than the PCTF-Al2O3 substrate (201°C). It is obvious that the PCTF-diamond substrate can effectively improve the photothermal performances of DUV LEDs, which is of great significance for heat dissipation in high-power devices.