Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

作者：Gabriele Pasquale, Zhe Sun, Guilherme Migliato Marega, Kenji Watanabe, Takashi Taniguchi, András Kis · 发表于：Nature Nanotechnology · 年份：2024 · DOI：10.1038/s41565-024-01717-y · 被引用次数：19 · 研究领域：Topological Materials and Phenomena、Metamaterials and Metasurfaces Applications、Quantum Mechanics and Non-Hermitian Physics

Abstract The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10 3 . Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K −1 T −1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena.