Realization of high transparent mobility zinc‐doped indium oxide (IZO) thin films by RF‐magnetron sputtering

作者：Bingxue Han, Zhijun Wang, Lijia Chen, Bin Wu, Chongyang Chen, Benshuang Sun · 发表于：International Journal of Applied Ceramic Technology · 年份：2024 · DOI：10.1111/ijac.14830 · 被引用次数：10 · 研究领域：ZnO doping and properties、Thin-Film Transistor Technologies、Transition Metal Oxide Nanomaterials

Abstract Zinc‐doped indium oxide (IZO) thin films were deposited on silicon dioxide substrates by radio‐frequency magnetron sputtering using an IZO ceramic target with In 2 O 3 /ZnO weight ratio of 9:1. The effects of power, pressure, and distance between target and substrate on microstructure and photoelectric properties of IZO films were investigated. The results show the performance of IZO films prepared under the conditions of power 80 W, air pressure .5 Pa, and target base distance 80 mm are the best, and the IZO films are amorphous with high transmittance (>86.0%), high mobility (>45.0 cm 2 /V s), and low resistivity (less than 2.0 × 10 −4 Ω cm), which are the best photoelectric performance reported at present. This work provides a feasible research approach for preparing high‐performance IZO thin films.