Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering

作者：Xiao Zhai, Jun Ouyang, Weijie Kuai, Yinxiu Xue, Kun Wang, Nengneng Luo, Hongbo Cheng, Hanfei Zhu, C. H. Liu, Limei Zheng · 发表于：Journal of Materiomics · 年份：2024 · DOI：10.1016/j.jmat.2024.05.005 · 被引用次数：7 · 研究领域：Ferroelectric and Piezoelectric Materials、Microwave Dielectric Ceramics Synthesis、Magnetic and transport properties of perovskites and related materials

Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse power fields. Environmental-friendly AgNbO3 family have been actively studied for its large polarization and antiferroelectric nature, which greatly boost the electric energy storage performance. However, high-quality AgNbO3-based films are difficult to fabricate, leading to a low breakdown field Eb (<1.2 MV/cm) and consequently arising inferior energy storage performance. In this work, we propose an interface engineering strategy to mitigate the breakdown field issue. A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where the BaTiO3 layer acts as a p-type semiconductor while Ag(Nb,Ta)O3 layer is n-type, together with the n-type LaNiO3 buffer layer on the substrate, forming an n-p-n heterostructure. The n-p-n heterostructure elevates the potential barriers for charge transport, greatly reducing the leakage current. An extremely large breakdown field Eb∼4.3 MV/cm is achieved, being the highest value up to date in the niobate system. A high recoverable energy density Wrec∼62.3 J/cm3 and a decent efficiency η∼72.3% are obtained, much superior to that of the Ag(Nb,Ta)O3 monolayer film (Wrec∼46.4 J/cm3 and η∼80.3% at Eb∼3.3 MV/cm). Our results indicate that interface engineering is an effective method to boost energy storage performance of dielectric film capacitors.