Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

作者：Xiao Wang, Zhiyu Lin, Yuan-Hang Sun, Long Yue, Yumin Zhang, Jianfeng Wang, Ke Xu · 发表于：Science China Information Sciences · 年份：2024 · DOI：10.1007/s11432-024-4003-y · 被引用次数：5 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Semiconductor Quantum Structures and Devices