Atomistic analysis on implantation effects of hydrogen ions and copper ions into 4H-SiC

作者：Xudong Fang, Xiaoyu Wu, Qiang Kang, Ziyan Fang, Hao Sun, Chen Wu, Zhongkai Zhang, Prateek Verma, Ryutaro Maeda, Bian Tian, Chengwei Kang · 发表于：Applied Surface Science · 年份：2024 · DOI：10.1016/j.apsusc.2024.160329 · 被引用次数：9 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Diamond and Carbon-based Materials Research