A synapse with low power consumption based on MoTe 2 /SnS 2 heterostructure

作者：Wenxin He, Yanhui Xing, P Fang, Zisuo Han, Zhipeng Yu, Rongbin Zhan, Jun Han, Baolu Guan, Baoshun Zhang, Weiming Lv, Zhongming Zeng · 发表于：Nanotechnology · 年份：2024 · DOI：10.1088/1361-6528/ad4cf4 · 被引用次数：11 · 研究领域：Advanced Memory and Neural Computing、Photoreceptor and optogenetics research、Ferroelectric and Negative Capacitance Devices

Abstract The use of two-dimensional materials and van der Waals heterostructures holds great potential for improving the performance of memristors Here, we present SnS 2 /MoTe 2 heterostructure synaptic transistors. Benefiting from the ultra-low dark current of the heterojunction, the power consumption of the synapse is only 19 p J per switching under 0.1 V bias, comparable to that of biological synapses. The synaptic device based on the SnS 2 /MoTe 2 demonstrates various synaptic functionalities, including short-term plasticity, long-term plasticity, and paired-pulse facilitation. In particular, the synaptic weight of the excitatory postsynaptic current can reach 109.8%. In addition, the controllability of the long-term potentiation and long-term depression are discussed. The dynamic range ( G max / G min ) and the symmetricity values of the synaptic devices are approximately 16.22 and 6.37, and the non-linearity is 1.79. Our study provides the possibility for the application of 2D material synaptic devices in the field of low-power information storage.