Light-Induced Conductance Potentiation and Depression in an All-Optically Controlled Memristor

作者：Xinmiao Li, Zijing Fang, Xing Guo, Ruixiao Wang, Yinxi Zhao, Wenhui Zhu, Liancheng Wang, Lei Zhang · 发表于：ACS Applied Materials & Interfaces · 年份：2024 · DOI：10.1021/acsami.4c02092 · 被引用次数：28 · 研究领域：Advanced Memory and Neural Computing、Photoreceptor and optogenetics research、Neural Networks and Reservoir Computing

Optoelectronic memristors are new multifunctional devices with both electrically tunable and light-tunable synaptic plasticity, attracting great attention as key promising devices for optoelectronic neuromorphic computing systems. At present, the conductance modulation in most optoelectronic memristors is conducted in a hybrid photoelectric mode, suffering some problems such as heat generation and control complexity. Here, an optoelectronic memristor based on the p + -Si/n-ZnO heterojunction is proposed where the conductance can be reversibly modulated in an all-optically controlled mode. The electron detrapping/trapping mechanism at the p + -Si/n-ZnO interface barrier region is presented to explain the light-induced conductance potentiation/depression behavior. Furthermore, some synaptic functions, including excitatory postsynaptic current (EPSC), inhibitory postsynaptic current (IPSC), and paired-pulse facilitation (PPF), are successfully mimicked in the p + -Si/n-ZnO heterojunction memristor, instructing its application potential for optoelectronic neuromorphic computing.