Stable Ga2O3 soft x-ray detector with ultrahigh responsivity

作者：Shunjie Yu, Yan Liu, Xiaohu Hou, Mengfan Ding, Yanni Zou, Yong Guan, Zhao Wu, Xiaolong Zhao, Qin Hu, Guangwei Xu, Shibing Long · 发表于：Applied Physics Letters · 年份：2024 · DOI：10.1063/5.0204816 · 被引用次数：19 · 研究领域：Ga2O3 and related materials、Electronic and Structural Properties of Oxides、Advanced Semiconductor Detectors and Materials

Soft x-ray detectors play crucial roles in biology, chemistry, and lithography. Current soft x-ray detectors suffer from insufficient responsivity (R), excessively large cell area, and limited stability. Here, the β-Ga2O3 soft x-ray detector is constructed, and the effects of varying the sensitive layer thickness and voltage on the soft x-ray detection characteristics of the device are explored. Meanwhile, the mechanism of the multiplication ionization process from soft x-ray and the photoconductivity gain on the photoresponse performance of the device are analyzed. The device obtains the R up to 3.05 × 103 A/W under 300 eV soft x-ray irradiation at the synchrotron beamline, which is about 1.19 × 104 times higher than that of the conventional device. The Ga2O3 device also maintains stable operation under long-term irradiation and multicycle switching. These results indicate that Ga2O3 is an ideal candidate material for soft x-ray detection, which has great potential for applications such as imaging of biological cells.