Magnetic and electrical transport properties in GdAlSi and SmAlGe

作者：Jing Gong, Huan Wang, Xiaoping Ma, Xiangyu Zeng, Jun-Fa Lin, Kun Han, Yi-Ting 乙婷 Wang 王, Tian‐Long Xia · 发表于：Chinese Physics B · 年份：2024 · DOI：10.1088/1674-1056/ad41ba · 被引用次数：9 · 研究领域：Rare-earth and actinide compounds、Iron-based superconductors research、Topological Materials and Phenomena

Abstract We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals, which possess a LaPtSi-type structure (space group I 4 1 md ). The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature ( T N ). For GdAlSi, a hysteresis loop is observed in the magnetization and magnetoresistance curves within the ab plane when the magnetic field is applied below T N , which is around 32 K. Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe, confirming the occurrence of magnetic transitions. In addition, the extracted magnetic entropy at high temperatures is consistent with the theoretical value of R ln(2 J + 1) for J = 7/2 in Gd 3+ and J = 5/2 in Sm 3+ , respectively. SmAlGe also exhibits Schottky-like specific heat contributions. Additionally, both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.