Experimental Demonstration of Non-Volatile Boolean Logic With Field Configurable 1FeFET-1RRAM Technology

作者：Zhetao Ding, Xueyang Li, Chengji Jin, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han · 发表于：IEEE Electron Device Letters · 年份：2024 · DOI：10.1109/led.2024.3390403 · 被引用次数：10 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices

In this work, a novel 1FeFET-1RRAM (1FeFET1R) design for logic-in-memory (LiM) applications has been proposed and experimentally demonstrated. Emerging non-volatile storage devices – FeFET and RRAM, are integrated together for non-volatile logic operations and logic reconfiguration, respectively. Complete Boolean logic functions have been demonstrated with the 1FeFET1R unit and cascade circuits, which also exhibit excellent speed and reliability performance. Therefore, the demonstrated 1FeFET1R design is a promising LiM solution for its superiority in area efficiency, power consumption, process simplicity, speed, reliability and field reconfigurability.