Gate-tunable subband degeneracy in semiconductor nanowires

作者：Yuhao Wang, Wenyu Song, Zhan Cao, Zehao Yu, Shuai Yang, Zonglin Li, Yichun Gao, Ruidong Li, Fangting Chen, Zuhan Geng, Lining Yang, Jiaye Xu, Zhaoyu Wang, Shan Zhang, Xiao Feng, Tiantian Wang, Yunyi Zang, Lin Li, Runan Shang, Qi‐Kun Xue, Dong E. Liu, Ke He, Hao Zhang · 发表于：Proceedings of the National Academy of Sciences · 年份：2024 · DOI：10.1073/pnas.2406884121 · 被引用次数：9 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Nanowire Synthesis and Applications、Semiconductor Quantum Structures and Devices

Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate-tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the absence of a quantized plateau. Utilizing a dual gate design, we can apply an electric field to lift the degeneracy, reflected as emergence of the plateau. This degeneracy and its tunable lifting were challenging to observe in previous nanowire experiments, possibly due to disorder. Numerical simulations can qualitatively capture our observation, shedding light on device parameters for future applications.