Entropy engineering enabled atomically dispersed Cu doping leading to an exceptionally high thermoelectric figure of merit in n-type lead chalcogenides

作者：Ziling Yuan, Mengyue Wu, Shuai Han, Pengfei Liu, Zhen‐Hua Ge, Bangzhi Ge, Menghua Zhu, Yadong Xu, Wanqi Jie, Dongyao Zhao, Bingchao Yang, Yongsheng Zhang, Ming Liu, Min Zhu, Chao Li, Yuan Yu, Chongjian Zhou · 发表于：Energy & Environmental Science · 年份：2024 · DOI：10.1039/d4ee00691g · 被引用次数：37 · 研究领域：Chalcogenide Semiconductor Thin Films、Phase-change materials and chalcogenides、Advanced Thermoelectric Materials and Devices

Entropy engineering fully dissolved extra Cu atoms into the interstitial lattice sites of lead chalcogenides, yielding high charge carrier mobility and ZT values in a wide temperature range.