Narrow Bandgap Metal Halide Perovskites for All-Perovskite Tandem Photovoltaics

作者：Shuaifeng Hu, Jarla Thiesbrummel, Jorge Pascual, Martin Stolterfoht, Atsushi Wakamiya, Henry James Snaith · 发表于：Chemical Reviews · 年份：2024 · DOI：10.1021/acs.chemrev.3c00667 · 被引用次数：205 · 研究领域：Perovskite Materials and Applications、Chalcogenide Semiconductor Thin Films、Conducting polymers and applications

All-perovskite tandem solar cells are attracting considerable interest in photovoltaics research, owing to their potential to surpass the theoretical efficiency limit of single-junction cells, in a cost-effective sustainable manner. Thanks to the bandgap-bowing effect, mixed tin-lead (Sn-Pb) perovskites possess a close to ideal narrow bandgap for constructing tandem cells, matched with wide-bandgap neat lead-based counterparts. The performance of all-perovskite tandems, however, has yet to reach its efficiency potential. One of the main obstacles that need to be overcome is the─oftentimes─low quality of the mixed Sn-Pb perovskite films, largely caused by the facile oxidation of Sn(II) to Sn(IV), as well as the difficult-to-control film crystallization dynamics. Additional detrimental imperfections are introduced in the perovskite thin film, particularly at its vulnerable surfaces, including the top and bottom interfaces as well as the grain boundaries. Due to these issues, the resultant device performance is distinctly far lower than their theoretically achievable maximum efficiency. Robust modifications and improvements to the surfaces of mixed Sn-Pb perovskite films are therefore critical for the advancement of the field. This Review describes the origins of imperfections in thin films and covers efforts made so far toward reaching a better understanding of mixed Sn-Pb perovskites, in particular with respect to surface modifications that improved the efficiency and stabilit...