Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals

作者：Sheng'ou Lu, Binjie Xu, Yazhe Wang, Hongyu Chen, Wei Hang, Rong Wang, Julong Yuan, Xiaodong Pi, Deren Yang, Xuefeng Han · 发表于：CrystEngComm · 年份：2024 · DOI：10.1039/d4ce00055b · 被引用次数：16 · 研究领域：Silicon Carbide Semiconductor Technologies、Aluminum Alloys Composites Properties、Semiconductor materials and interfaces

The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. The results showed that the TRSS changed from 6-fold to 4-fold symmetry with the increasing off-axis angles.