Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM

作者：Zhiyuan Fu, Shengjie Cao, Hao Zheng, Jin Luo, Qianqian Huang, Ru Huang · 发表于：IEEE Transactions on Electron Devices · 年份：2024 · DOI：10.1109/ted.2024.3369569 · 被引用次数：7 · 研究领域：Ferroelectric and Negative Capacitance Devices、Advanced Memory and Neural Computing、Semiconductor materials and devices

This study presents an experimental demonstration of 3-D-stackable hafnia-based selector-free cross-point FeRAM, with enhanced disturbance immunity achieved through design technology co-optimization (DTCO). Considering ferroelectric (FE) dynamics, the disturbance behavior of FE devices has been systematically and quantitatively examined using the proposed “pulse-disturb” analysis method. Through the optimization of grain uniformity and interfacial layers, the fabricated Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$(HZO) FE capacitor exhibits large grain size exceeding 30 nm with record best disturbance immunity among FE-HZO. It also achieves a significant improvement of MW in selector-free FeRAM operation and enhanced remnant polarization ($\textit{P}_{\text{r}}$) of approximately 23$\mu $C/cm$^{\text{2}}$, low operation voltage (2.4 V), high endurance (10$^{\text{13}}$cycles), long retention capability (ten years), and excellent potential for 3-D stacking. Moreover, to address the multiple pulses disturb issue, a novel “disturb-recovery” pulsing method is proposed, showing multidisturb-free operation for practical cross-point array applications. Based on the above strategies, 1-kbit selector-free cross-point FeRAM array is experimentally demonstrated with successful read/write operation, indicating its great potential for high-density and low-power memory applications.