Investigation on the Bandgap-Adjustable (Ga 1– x In x ) 2 O 3 Film Prepared by Magnetron Sputtering

作者：Tao Lin, Chaoyang Xie, Sha Yang, Jianan Xie, Yantao Liu, Sui Chen, Haoxiang Huang, Jiale Dang, Rong Huang, Yupeng Duan · 发表于：ACS Applied Electronic Materials · 年份：2024 · DOI：10.1021/acsaelm.3c01776 · 被引用次数：8 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Advanced Photocatalysis Techniques

With the continuous development of Ga 2 O 3 ultrawide bandgap material and devices, the demand for Ga 2 O 3 -based heterostructure has been increasing in recent years. (Ga 1– x In x ) 2 O 3 alloy, which boasts an adjustable bandgap, offers greater flexibility in the creation of optoelectronic and microelectronic devices. This paper presents a thorough analysis of (Ga 1– x In x ) 2 O 3 films fabricated using magnetron cosputtering with Ga 2 O 3 and In 2 O 3 targets. By modifying the sputtering power of the In 2 O 3 target, (Ga 1– x In x ) 2 O 3 films with the In content ranging from 0 to 0.81 can be produced, which can provide an adjustable bandgap within 4.94–3.42 eV. Meanwhile, the influences of the O 2 /Ar ratio and annealing temperature on the (Ga 1– x In x ) 2 O 3 films are analyzed, and a high O 2 /Ar ratio can enhance the flatness of the film by reducing the oxygen vacancy and increasing its density; a high annealing temperature can improve the crystallization quality of (Ga 1– x In x ) 2 O 3 films.