Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors

作者：Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide · 发表于：Applied Physics Letters · 年份：2024 · DOI：10.1063/5.0194424 · 被引用次数：16 · 研究领域：Diamond and Carbon-based Materials Research、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design

High-performance boron-doped diamond (B-diamond) metal–oxide–semiconductor field-effect transistors (MOSFETs) are fabricated by improving fabrication process and device structures. Drain current maximum values for the B-diamond MOSFETs operating at room temperature and 300 °C are −1.2 and −10.9 mA/mm, respectively. Both exhibit on/off ratios higher than 109 and their extrinsic transconductance maximum values are 29.0 and 215.7 μS/mm, respectively. These properties surpass the values reported in previous studies.