High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension

作者：Jiawei Cui, Yanlin Wu, Junjie Yang, Jingjing Yu, Teng Li, Xiaosen Liu, Kai Cheng, Xuelin Yang, Yilong Hao, Jinyan Wang, Bo Shen, Maojun Wang, Jin Wei · 发表于：IEEE Transactions on Electron Devices · 年份：2024 · DOI：10.1109/ted.2024.3359174 · 被引用次数：30 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Silicon Carbide Semiconductor Technologies

An enhancement-mode (E-mode) p-type gallium nitride (p-GaN) gate high electron mobility transistor with a gate termination extension (GTE-HEMT) has been developed on a sapphire substrate, intended for power switching applications of kilovoltage (kV) level. The GTE-HEMT device exhibits a low ON-resistance (${R} _{ \mathrm{\scriptscriptstyle ON}}$) of$19.3~\Omega \cdot $mm, corresponding to a specific${R} _{ \mathrm{\scriptscriptstyle ON}}$(${R} _{ \mathrm{\scriptscriptstyle ON},\text {SP}}$) of 7.33$\text{m}\Omega \cdot $cm2. Notably, the GTE-HEMT has achieved a breakthrough by increasing the breakdown voltage (BV) to 2573 V, surpassing the conventional p-GaN gate HEMT (Conv-HEMT) with its BV of 1679 V. The enhanced BV is ascribed to the gate termination extension (GTE) that reduces the gate-edge electric field peak, similar to a junction termination extension (JTE) in traditional Si power devices. In addition, the dynamic${R} _{ \mathrm{\scriptscriptstyle ON}}$of the GTE-HEMT has been improved, with a normalized dynamic${R} _{ \mathrm{\scriptscriptstyle ON}}$(dynamic${R} _{ \mathrm{\scriptscriptstyle ON}}$/static${R} _{ \mathrm{\scriptscriptstyle ON}}$) of 1.4 and 2.6 for 650- and 1200-V OFF-state stress, respectively. The GTE-HEMT has been benchmarked to the state-of-the-art GaN power transistors, demonstrating its potential for high-voltage applications.