A Sub-100nA Ultra-low Leakage MCU Embedding Always-on Domain Hybrid Tunnel FET-CMOS on 300mm Foundry Platform

作者：Yaoru Hou, Kaifeng Wang, Chenxing Liu-Sun, Jianfeng Hang, Xinfang Tong, Chunyu Peng, Yongqin Wu, Ye Ren, Weihai Bu, Xin Si, Bo Liu, Xiulong Wu, Jun Yang, Hao Cai, Qianqian Huang, Ru Huang · 年份：2023 · DOI：10.1109/iedm45741.2023.10413723 · 被引用次数：8 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Nanowire Synthesis and Applications

This work firstly demonstrates an ultra-low leakage microcontroller unit (MCU) based on 55nm tunnel FET (TFET) -CMOS hybrid 300mm foundry platform. By utilizing the large IONand record high ION/IOFFratio of the dopant segregation TFET (DS-TFET), a 1Kbit TFET-Gated-Ground static random access memory (TGG-SRAM) is implemented in MCU always-on domain. A voltage-stacking scheme is proposed to regulate the supply voltage. Experimental results show that TGG-SRAM and TFET-MCU obtain order of magnitude standby power reduction, cost 6nA (data retention) and 75nA (deep-sleep mode) leakage current respectively, indicating the great potential of the TFET-CMOS hybrid platform for cutting-edge power-dieting MCU.