Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

作者：Cheng Peng, Xiongliang Yao, Xinyang Miao, S. W. Chen, Qifang Lu, Xiujun Han, Dongyan Shi, Yingjuan Shao, Yongzhong Wu, Xiaojian Hao · 发表于：CrystEngComm · 年份：2024 · DOI：10.1039/d3ce01045g · 被引用次数：2 · 研究领域：GaN-based semiconductor devices and materials、Acoustic Wave Resonator Technologies、Semiconductor materials and devices

A novel heat sink at the top of the crucible improves the seed surface growth uniformity by 89%.