p -GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications

作者：Yat Hon Ng, Zheyang Zheng, Li Zhang, Ruizi Liu, Tao Chen, Sirui Feng, Qiming Shao, Kevin J. Chen · 发表于：Applied Physics Letters · 年份：2024 · DOI：10.1063/5.0184784 · 被引用次数：33 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、ZnO doping and properties

In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics for operating in an extremely wide temperature range (X-WTR) from 2 to 675 K, with comprehensive X-WTR studies on device operation and circuit behaviors. The key enabler for the high-temperature operation is the wide bandgap that substantially suppresses the thermal excitation of the intrinsic carrier. However, for the low-temperature side, the two-dimensional electron and hole gas (2DEG and 2DHG) channels at the heterojunctions are formed by the temperature-insensitive polarization fields, which free the carriers from freezing out. The monolithically integrated GaN n-FET, p-FET, and the resultant complementary circuits are, therefore, shown to operate in X-WTR.