Asymmetric Schottky Barrier-Generated MoS2/WTe2 FET Biosensor Based on a Rectified Signal

作者：Xinhao Zhang, Shuo Chen, Heqi Ma, Tianyu Sun, Xiangyong Cui, Panpan Huo, Baoyuan Man, Cheng Yang · 发表于：Nanomaterials · 年份：2024 · DOI：10.3390/nano14020226 · 被引用次数：10 · 研究领域：2D Materials and Applications、Advanced biosensing and bioanalysis techniques、Nanowire Synthesis and Applications

Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noise signal, caused by the interference coefficient of external factors, may destroy the quantitative analysis of trace targets in complex biological systems. In this report, a “rectified signal” in the output characteristic curve, instead of the “absolute value signal” in the transfer characteristic curve, is obtained and analyzed to solve these problems. The proposed asymmetric Schottky barrier-generated MoS2/WTe2 FET biosensor achieved a 105 rectified signal, sufficient reliability and stability (maintained for 60 days), ultra-sensitive detection (10 aM) of the Down syndrome-related DYRK1A gene, and excellent specificity in base recognition. This biosensor with a response range of 10 aM–100 pM has significant application potential in the screening and rapid diagnosis of Down syndrome.